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256×256像元MOS电阻阵是红外成像制导系统半实物仿真的核心器件,其芯片的性能直接影响仿真性能和实验结果,而其能测试和非线性修正一直是红外成像仿真领域的关键问题和前沿技术。深入分析了电阻阵主要性能指标的测试方法,在测试和实验的基础上,提出了映射配准和失效像素补偿的算法,设计了基于指数曲线的非线性修正模型,完成了修正补偿工作并进行了测试和分析。结果表明非线性修正算法可行,修正后的MOS电阻阵线性控制特性较好,红外图像灰度层次有较大提高,较好地满足了红外成像制导的仿真需求。
The 256 × 256 pixel MOS resistor array is the core of the hardware-in-the-loop simulation of infrared imaging guidance system. The performance of the chip directly affects the simulation performance and experimental results. However, its testability and non-linearity correction are the key issues in the infrared imaging simulation field. advanced technology. In-depth analysis of the test method of the main performance index of the resistive array, based on the test and experiment, the algorithm of mapping registration and invalid pixel compensation is proposed, the non-linear correction model based on the exponential curve is designed, the compensation is completed and carried out The test and analysis. The results show that the non-linear correction algorithm is feasible. The modified MOS resistance matrix has better linear control characteristics, and the grayscale levels of infrared images are greatly improved, which better meets the simulation requirements of infrared imaging guidance.