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我们对常压CVD生长的a-Si作了BED、TED、SEM和TEM观测、分析。结果表明,表面存在岛状微结构;侧面具有菱形柱状微结构,CVD a-Si的生长形态与衬底密切关联。
We performed BED, TED, SEM and TEM observations on the a-Si grown by atmospheric CVD. The results show that there are island-like microstructures on the surface and rhombic columnar microstructures on the flanks. The growth morphology of CVD a-Si is closely related to the substrate.