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利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiNx薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术,研究了基片温度对SiNx薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响,并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明,在基片温度低于300℃时制备的SiNx薄膜以非晶状态存在,硬度值仅为18 GPa左右;基片温度在320—620℃范围内,SiNx薄膜中出现纳米晶粒,且晶粒尺寸随沉积温度的增加而增加,在沉积温度为620℃时达到最大,为20±1.5nm;当沉积温度为700℃时,SiNx薄膜的晶粒尺寸突然减小,但由于此时晶粒密度为最大,因此薄膜硬度达到最大值(36.7 GPa).
Hydrogen-free SiNx thin films were prepared by microwave electron cyclotron resonance enhanced magnetron reactive sputtering at different substrate temperatures. The properties of the substrate were studied by Fourier transform infrared spectroscopy, transmission electron microscopy, Temperature on the crystallinity, crystallite size, crystallographic orientation and other mechanical properties of SiNx thin films, as well as the growth rate and hardness of the films, and the relationship between the crystallinity and mechanical properties of the films was discussed.The results show that in the substrate The SiNx thin films prepared at temperatures below 300 ℃ exist in amorphous state with a hardness of only 18 GPa. When the substrate temperature is in the range of 320-620 ℃, nano-crystalline grains appear in the SiNx thin films, and the grain size changes with the deposition temperature Of the SiNx thin film increases sharply, reaching a maximum of 20 ± 1.5 nm at a deposition temperature of 620 ° C. When the deposition temperature is 700 ° C, the grain size of the SiNx thin film suddenly decreases, but at this time, the grain density is the largest, Film hardness reached its maximum (36.7 GPa).