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Silicon carbide (SiC) possesses outstanding physical and mechanical properties that make it very promising for applications in semiconductors, advanced nuclear reactors and nuclear waste technology[1~3]. In the semiconductor applications, damage in crystals can be inevitably produced due to ion implantation which is used for dopant incorporation in electronic device fabrication. For the applications in nuclear power industry, defects can be accumulated in materials due to irradiation of energetic particles like neutrons, alpha particles and fission products including heavy inert-gas ions[4]. The accumulation of radiation damage leads to degradation of the material, and needs a full understanding for the sake of safety and reliability of nuclear power systems. In the present work, specimens of 6H-SiC were implanted with Xe ions with multiple kinetic energies at room temperature to obtain nearly uniform Xe concentrations of 7.5, 30, 150 at.ppm, respectively, and were subsequently thermally annealed under high vacuum. The lattice damage of specimens was studied with high resolution X-ray diffraction spectrometry.
Silicon carbide (SiC) possesses outstanding physical and mechanical properties that make it very promising for applications in semiconductors, advanced nuclear reactors and nuclear waste technology [1 ~ 3]. In the semiconductor applications, damage in crystals can be inevitably produced due to ion implantation which is used for dopant incorporation in electronic device fabrication. For the applications in nuclear power industry, defects can be accumulated in materials due to irradiation of energetic particles like neutrons, alpha particles and fission products including heavy inert-gas ions. [4]. The in the present work, specimens of 6H-SiC were implanted with Xe ions with multiple kinetic energies at room temperature To obtain nearly uniform Xe concentrations of 7.5, 30, 150 at. ppm, respectively, and were subsequently thermal ly annealed under high vacuum. The lattice damage of specimens was studied with high resolution X-ray diffraction spectrometry.