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本文首先从理论上分析并计算了压缩应变多量子阱激光器的增益特性，并且讨论了在多量子阱垒区进行ｐ型强调制掺杂的情况下，价带空穴的准费米能级的移动以及微分增益谱的变化。然后，计算了线宽增强因子（α）与应变大小和掺杂浓度以及注入载流子浓度之间的关系，结果发现压缩应变和增大载流子注入虽然能够减小α因子，但很难使它的零点波长对应于增益区，而利用调制掺杂技术能有效地使α因子的零点对应于增益区。在增大压缩应变和载流子注入浓度的情况下可以明显减小为使α因子变为零所需要的调制掺杂浓度。
In this paper, we first analyze and calculate the gain characteristics of the compressive strain multiple quantum well laser in theory and discuss the quasi-Fermi level of the valence band holes in the case of p-type intense modulation doping in the multiple quantum well region. Movement and differential gain spectrum changes. Then, the relationship between the linewidth enhancement factor (α) and the strain size and doping concentration as well as the injected carrier concentration was calculated. It was found that although compressive strain and increased carrier injection can reduce the α factor, it is very difficult So that its zero wavelength corresponds to the gain region, and the use of modulation doping technology can effectively zero point α factor corresponds to the gain region. With increasing compressive strain and carrier injection concentration, the modulation doping concentration required to bring the alpha factor to zero can be significantly reduced.