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Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure.The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights.As a result,the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope (S factor).Especially,Id of 0.2 μA/μm is revealed at Vg-Vth =Vd =±0.5 V for Ge pTFETs,with the S factor of 28mV/dec at 7K.