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高压电子显微镜的原位技术是研究金属和其他材料中晶体缺陷的一种重要的、有效的方法。本文研究了中温条件下铜中辐照缺陷的形成、演变过程,详细地介绍了所采用的缺陷分析方法。结果表明,层错环在{111}面上,为间隙型;其周界为弗兰克型不全位错,柏氏矢量(?)=a/3 <111>,这种不全位错只能在{111}面上攀移,不能滑移;当层错长到一定大小时,层错面经a/6 <112>型切变发生非层错化反应,层错消失,留下柏氏矢量(?)=a/2 <110>型的全位错。最后文中讨论了非层错化反应过程的能量。
In situ techniques of high-pressure electron microscopy are an important and effective method of studying crystal defects in metals and other materials. In this paper, the formation and evolution of irradiation defects in copper under medium temperature conditions were studied, and the defect analysis methods adopted were introduced in detail. The results show that the stacking fault rings are of the gap type on the {111} plane. The permutations are Frank-type dislocations and the Boltzmann vectors (a) = a / 3 <111> } Plane climb, can not slip; when the layer fault grows to a certain size, the layer staggered surface by a / 6 <112> -type shear non-layer fault reaction occurs, the fault disappears, leaving the Burgers vector = a / 2 <110> type of all-bit error. Finally, the paper discusses the energy of non-layer miscibility reaction process.