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利用超高真空脉冲直流磁控溅射技术制备了纳米量级厚度的CNx薄膜。利用自行设计的一种简单的探针测定了薄膜合成中的等离子体参数,获得了等离子体参数与合成工艺参数的关系。结果表明:在300 W的靶功率和-100 V的偏压下,等离子体的电子温度和电子数密度均最高,分别达到4.62 eV、6.8×1015/m3和3.25 eV、1.9×1015/m3。原子力显微镜观察表明,在此合成工艺参数下制备的CNx薄膜表面显示了最低的粗糙度均方根。
CNx thin films with nanometer order thickness were fabricated by ultra-high vacuum pulsed DC magnetron sputtering. A simple probe designed by ourselves was used to measure the plasma parameters in the thin film synthesis, and the relationship between the plasma parameters and the synthesis parameters was obtained. The results show that the electron temperature and electron density of the plasma are the highest at the target power of 300 W and the bias voltage of -100 V, reaching 4.62 eV, 6.8 × 1015 / m3 and 3.25 eV, 1.9 × 1015 / m3 respectively. Atomic force microscopy showed that the surface roughness of the CNx films prepared at this synthesis process showed the lowest root mean square roughness.