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采用低压MOCVD技术生长了A lGaN/GaN、A lGaN/A lN等多种交替生长结构的半导体多层膜分布布拉格反射镜(DBR)。利用X射线衍射、扫描电子显微镜(SEM)、原子力显微镜(AFM)等测量手段对材料的物理特性进行了分析表征。结果表明,材料结构对DBR的性能影响很大。通过材料的优化生长,获得了反射率高达93.5%、中心波长和发射率都接近理论值的A lGaN/A lN DBR材料。
A multi-layered distributed semiconductor Bragg reflector (DBR) with alternating growth structures such as AlGaN / GaN and AlGaN / AlN was grown by low pressure MOCVD. The physical properties of the materials were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the material structure has a great influence on the performance of DBR. By optimizing the growth of the material, A lGaN / AlN DBR materials with a reflectance as high as 93.5% and a center wavelength and an emissivity close to the theoretical values were obtained.