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通过对样品的伏安特性,晶界势垒的测量和分析,研究了Nd2O3对SnO2·Co2O3·Nb2O5压敏电阻瓷电性能的影响。发现掺入x(Nb2O3)为0.050%的样品表现出最好的压敏性质,其压敏电压为460.69 V/mm,密度为6.812 g/cm3,非线性系数为18.7。为了说明电学非线性的起源,提出了SnO2压敏材料的一个缺陷势垒模型。
The influence of Nd2O3 on the electrical properties of SnO2 · Co2O3 · Nb2O5 piezoresistors was investigated by measuring the volt-ampere characteristics of the samples and the barrier of grain boundary. The sample doped with 0.050% of x (Nb2O3) was found to exhibit the best pressure-sensitive properties with a voltage-sensitive voltage of 460.69 V / mm, a density of 6.812 g / cm3 and a nonlinear coefficient of 18.7. In order to illustrate the origin of electrical nonlinearity, a defect barrier model for SnO2 varistor materials was proposed.