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基于0.35μm工艺,设计了应用于低光照环境下的低噪声、高灵敏度CMOS图像传感器。该图像传感器采用PPD 4T像素结构,像素阵列512×512,包含列级运放、水平移位寄存器、逻辑控制单元、单斜率模数转换器和偏置电路等模块。通过采用低噪声PPD 4T像素结构、低噪声列级放大器电路结构,以及对版图的优化设计等措施实现了低噪声、高灵敏度的CMOS图像传感器设计。
Based on the 0.35μm process, a low noise and high sensitivity CMOS image sensor is designed for low light environment. The image sensor uses PPD 4T pixel structure, the pixel array 512 × 512, including the column-level op amp, horizontal shift register, logic control unit, single slope analog-digital converter and bias circuit module. By using low noise PPD 4T pixel structure, low noise stage amplifier circuit structure, and the optimal layout of the layout and other measures to achieve low noise, high sensitivity CMOS image sensor design.