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通过测量卫星用FLASH存储器的内部存储数据逻辑状态出错(WW≠0)、电源电流、输出高低电平电压、输入漏电流以及交流参数随辐照剂量的变化情况,对FLASH存储器的电离辐射效应损伤规律、敏感参数进行了研究。研究结果表明,FLASH存储器的电离辐射效应损伤规律主要表现为随辐照剂量增加,存储数据逻辑状态出现错误,数据读取、数据擦除以及维持模式下的电源电流逐渐增大,这些参数可以作为辐照敏感参数;动态辐照偏置下存储数据逻辑状态出错时的剂量阈值比静态辐照偏置和不加电辐照偏置条件下大一个数量级以上。
By measuring the FLASH memory internal satellite data storage error logic (WW ≠ 0), the supply current, the output voltage level, the input leakage current and AC parameters with the radiation dose changes, the FLASH memory ionizing radiation damage Regular and sensitive parameters were studied. The results show that the damage of ionizing radiation of FLASH memory is mainly manifested as the increase of irradiation dose, the logic state of stored data is wrong, and the data current, data erasing, and power supply current in sustaining mode are gradually increasing. These parameters can be used as Radiation sensitivity parameters; the dose threshold when the logical state of the stored data under dynamic irradiation bias is wrong is larger by more than one order of magnitude under the static irradiation bias and non-irradiation bias conditions.