论文部分内容阅读
本文采用真空蒸镀法制备了不同厚度的酞菁锌(ZnPc)超薄膜,研究了不同厚度的ZnPc缓冲层对OLEDs器件发光性能的影响,测试了器件的一系列光电性能,对相关机理进行了探讨。结果表明:含有ZnPc修饰层的器件性能明显优于不含有修饰层的器件,加入ZnPc修饰层后器件发光稳定性也得到了改善,同时不同厚度的修饰层对器件性能的影响也有所不同。分析认为,ZnPc能有效改善ITO表面的平整度和降低空穴注入势垒的性质是提高器件性能的主要原因。
In this paper, ultrathin films of ZnPc with different thicknesses were prepared by vacuum evaporation method. The effects of ZnPc buffer layers with different thicknesses on the luminescent properties of OLEDs were investigated. A series of photoelectric properties of the devices were tested and the related mechanisms were studied Discussion. The results show that the device containing ZnPc modified layer has better performance than the device without modified layer. The luminescent stability of ZnPc modified layer is also improved after adding ZnPc modified layer. Meanwhile, the influence of different thickness of modified layer on the device performance is also different. The analysis shows that ZnPc can improve the flatness of the ITO surface and reduce the hole injection barrier property is the main reason to improve device performance.