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用Ｘ射线光电子能谱（ＸＰＳ）结合氩离子溅射深度剖析对一系列不同ｘ值的ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ异质结材料中各主元素的分布及化学状态和相对含量的变化进行了分析，发现Ａｌ向表面偏析的现象及Ａｓ和Ａｌ的择优溅射问题，并对此进行了讨论。同时用ＸＰＳ法进行了Ａｌ的定量分析，并与光致发光法测得的ｘ值进行了对比，发现二者有非常好的线性关系。
The distribution of main elements in AlxGa1-xAs / GaAs heterojunction materials with different x-values and the changes of their chemical states and relative contents were analyzed by X-ray photoelectron spectroscopy (XPS) combined with argon ion sputtering depth analysis. The phenomenon of segregation of Al to the surface and the preferential sputtering of As and Al were investigated and discussed. At the same time, the quantitative analysis of Al was carried out by XPS method and compared with the value of x measured by the photoluminescence method. It was found that there was a very good linear relationship between the two.