人们一提到3D晶片就会联想到采用硅穿孔(TSV)连接的晶片堆叠。但事实上,还有一些技术并未采用TSV,如BeSang公司最近授权给韩国海力士(SKHynix)的垂直晶体阵列技术。此外,由半导体研究联盟(SRC)赞助加州柏克莱大学最近开发出采用低温材料的新技术,宣称可带来一种低成本且灵活的3D晶片制造方法。该技术直接在标准CMOS晶片上的金属薄层之间制造主动元件,从而免除 When people mention 3D chips, they think of TSV-connected chip stacks. In fact, there are other technologies that do not use TSVs, such as the vertical crystal array technology recently licensed by BeSang to South Korea’s Hynix. In addition, sponsored by the Semiconductor Research Alliance (UC), Berklee University in California recently developed a new technology that uses cryogenic materials, claiming to deliver a low-cost and flexible 3D wafer fabrication method. The technology creates active components directly between thin layers of metal on standard CMOS wafers, eliminating the need for