PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

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用Sol-Gel法制备了Pb(1+x)TiO3/PbZr0·3Ti0·7O3/Pb(1+x)TiO3(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO3(PT)层进行制备,以获得优化的PT子晶层.X射线衍射和原子力显微镜分析结果表明PT层中过量Pb配比(x)对薄膜的微结构影响很大,只有PT层中Pb过量配比x=0·10—0·15的薄膜为表面晶粒大小均匀致密的纯钙钛矿结构.X射线电子能谱对薄膜微区进行元素成分分析表明,对x=0·00的薄膜,在表面和界面处Pb明显的缺乏;而x=0·20时的薄膜,Pb则明显的过量.薄膜的铁电性能、疲劳特性和漏电流特性等电学性能与PT层中过量Pb配比(x)没有明显的变化趋势,但与薄膜的结晶性能密切相关.结晶性能较好的薄膜,其电学性能也较好.说明PT层中过量Pb配比(x)是通过影响PT子晶层自身的结晶,而影响整个薄膜的结晶行为,并进一步影响到整个薄膜的电学性能.因此,在其他工艺参数都相同时,PT层中合适的过量Pb配比应为x=0·10—0·15.优化的子晶层不仅能获得结晶性能较好的薄膜,而且薄膜的电学性能也好. The Pb (1 + x) TiO3 / PbZr0.3Ti0.7O3 / Pb (1 + x) TiO3 (PT / PZT / PT) sandwich structure and the PZT ferroelectric thin films were prepared by the Sol-Gel method. In order to obtain high quality PT / PZT / PT sandwich structure ferroelectric thin films were prepared by using PbTiO3 (PT) layers with different Pb ratios (x) to obtain optimized PT sublayers.The results of X-ray diffraction and AFM showed that excessive Pb The ratio (x) has a great influence on the microstructure of the film, only the film with Pb excess ratio x = 0 · 10-0 · 15 in the PT layer is a pure perovskite structure with uniform and uniform grain size on the surface. The elemental composition analysis of the thin-film micro-region by energy spectrum shows that there is a clear lack of Pb at the surface and interface of the thin film at x = 0, whereas the thin film at x = 0.20 shows a significant excess of Pb The electrical properties such as electrical properties, fatigue properties and leakage current properties and the excess Pb ratio in the PT layer (x) showed no obvious trend but closely related to the crystallinity of the films. The films with better crystallinity also had better electrical properties It is shown that the excess Pb ratio (x) in the PT layer affects the crystallization of the PT sub-layer itself and affects the crystallization behavior of the entire film and further affects the entire film Therefore, the appropriate excess Pb content in the PT layer should be x = 0 · 10-0 · 15 at the same process parameters, and the optimized seed layer not only yields a thin film with better crystallinity, but also The electrical properties of the film is also good.
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