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采用金属有机物化学气相淀积技术(MOCVD)在蓝宝石衬底上低温(870—980℃)生长p型氮化镓(p-GaN).用Hall测试仪测量材料的电学性能,发现当温度低于900℃时,材料的电阻率较高;在900—980℃均可获得导电性能良好的p-GaN.另外,电导性能除与掺杂浓度有关,还与p-GaN生长条件有关,氮镓摩尔比过低导电性能就较差,过高则会引起表面粗糙.采用优化后的p-GaN制作了绿光发光二极管器件,发现生长温度越低器件发光强度越高,反向电压也越高,但正向电压只是略有升高.
P-GaN was grown on the sapphire substrate at a low temperature (870-980 ℃) by metal organic chemical vapor deposition (MOCVD). The electrical properties of the material were measured by Hall tester and found that when the temperature was lower than At 900 ℃, the resistivity of the material is high, and the p-GaN with good conductivity can be obtained at 900-980 ℃. In addition, the conductivity is related to the doping concentration and the growth condition of p-GaN, Lower than the conductivity is poor, too high will cause the surface roughness.Using the optimized p-GaN green light-emitting diode devices were fabricated and found that the lower the growth temperature of the device, the higher the luminous intensity, the reverse voltage is higher, But the forward voltage is only slightly increased.