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在本文中我们首次报道了p型掺杂的自组织Si/Ge量子点中空穴能级子带间的电子拉曼散射,此电子跃迁的能量为105meV。Si/Ge量子点Ge Ge模的共振拉曼散射表明此空穴能级间的电子拉曼散射与Γ点附近的E0(≈2.52eV)发生了共振,而E1的能量小于2.3eV.变温实验和偏振实验进一步证实了我们的指认。所有观测的实验数据与6 bandk·p能带结构理论的计算结果吻合得很好。
In this paper, we report for the first time the electron Raman scattering of holes in the p-type doped self-organized Si / Ge QDs with an energy of 105 meV. Resonance Raman scattering of Ge Ge mode at Si / Ge quantum dots shows that electron Raman scattering at this hole level resonates with E0 (≈2.52eV) near the Γ point, while the energy of E1 is less than 2.3eV. And polarization experiments further confirmed our identification. The experimental data of all the observations are in good agreement with the calculated results of 6 bandk · p band structure theory.