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本文通过热丝辅助等离子体增强化学气相沉积法 (HF PECVD)在单晶硅片和石英片衬底上分别成功生长了氮化硼薄膜材料。用X射线衍射 (XRD和傅立叶变换红外光谱 (FTIR)分析了薄膜样品的结构和组成 ,用扫描电镜 (SEM)观察了薄膜样品的表面形态 ,用紫外—可见光分光光度计 (UV)研究了薄膜样品的紫外吸收特征 ,并确认薄膜样品的光学能隙。此外 ,本文还探讨了衬底的超声预处理在薄膜材料生长中所起的作用
In this paper, boron nitride thin films have been successfully grown on single crystal wafers and quartz wafers by hot wire assisted plasma enhanced chemical vapor deposition (HF PECVD). The structure and composition of the films were analyzed by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The surface morphology of the films was observed by scanning electron microscopy (SEM). The films were characterized by UV-visible spectrophotometer UV absorption characteristics of the sample and confirm the optical energy gap of the film samples.In addition, the paper also discussed the role of substrate ultrasonic pretreatment in the growth of thin film materials