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对无体接触的深亚微米部分耗尽型SOI NMOSFET器件的输出特性分别进行了等温、非等温和非等温能量输运3种模式的模拟,结果表明:SiO2埋层的低导热率使器件在静态工作条件下硅膜温度上升,电子迁移率降低,漏端电流减小;同时,电子温度上升使电子扩散率增加,在无体接触情况下体区电子密度升高,体电势降低,漏端电流减小.通过对模拟结果的分析认为电子迁移率降低和扩散率升高是造成PD-SOI NMOSFET负微分电导现象的主要原因.
Three models of isothermal, non-isothermal and non-isothermal energy transport were simulated respectively for the output characteristics of the deep submicron partially depleted SOI NMOSFET device. The results show that the low thermal conductivity of SiO2 buried layer makes the Under static operating conditions, the temperature of the silicon film increases, the electron mobility decreases, and the current at the drain decreases. At the same time, the electron diffusion rate increases with increasing electron temperature. The electron density increases, the body potential decreases, Decrease.The reduction of electron mobility and the increase of diffusion rate are the main reasons for the negative differential conductance of PD-SOI NMOSFET.