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介绍了一种集成在BiCMOS工艺的p-i-n开关二极管的器件。它由在STI下面的n型赝埋层作为p-i-n的n区,锗硅npn异质结双极型晶体管的重掺杂外基区作为p-i-n的p区。同时新开发了穿过场氧的深接触孔工艺用于赝埋层的直接引出,并采用p-i-n注入用于对i区进行轻掺杂。借助半导体工艺与器件仿真软件,得到了有源区尺寸、赝埋层到有源区的距离、p-i-n注入条件等关键工艺参数对p-i-n性能的影响。最后优化设计的p-i-n二极管,其在2.4 GHz频率下的指标参数,如插入损耗为-0.56 dB,隔离度为-22.26 dB,击穿电压大于15 V,它达到了WiFi电路中的开关器件的性能要求。
A p-i-n switching diode integrated in the BiCMOS process is described. It consists of an n-type pseudo-buried layer beneath the STI as the n-region of p-i-n and a heavily doped outer base of a SiGe npn heterojunction bipolar transistor as the p-region of p-i-n. At the same time, a deep contact hole process through field oxygen has been newly developed for the direct extraction of the pseudo-buried layer and p-i-n implantation is used for lightly doping the i region. The influence of the key process parameters, such as the size of the active region, the distance between the pseudo-buried layer and the active region, and the p-i-n implantation condition, on the p-i-n performance is obtained through the semiconductor process and device simulation software. The final optimized design of the pin diode, which has specifications at 2.4 GHz, such as insertion loss of -0.56 dB, isolation of -22.26 dB and breakdown voltage greater than 15 V, achieves the performance of the switching device in the WiFi circuit Claim.