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为了研究光电导探测器对高频光信号的响应特性,分析了光电导探测器响应时间的物理机理,应用解析方法推导出了它的响应时间表达式及其适用条件,建立了光电导探测器的微变等效电路模型,测试了CdSe光电导探测器在不同外接负载电阻条件下的响应时间参数。实验表明:在照度小于103lx范围内,CdSe光电导探测器的响应时间平均值为5.4ms,与外接负载电阻的阻值无关。研究表明:线性光电导探测器的响应时间由半导体材料内部的微观结构决定;探测器可等效为恒流源和光电阻的并联;外接输出电路时,其总的响应时间与探测器的响应时间和光电检测电路的时间常数两个参数有关,一般应用中可近似取为探测器的响应时间。
In order to study the response characteristics of photoconductive detectors to high-frequency optical signals, the physical mechanism of photoconductive detectors’ response time is analyzed. The analytical expression of its response time and its application conditions are derived. The equivalent circuit model is used to test the response time parameters of CdSe photoconductive detectors with different external load resistances. Experiments show that: in the illumination less than 103lx range, CdSe photoconductive detectors average response time of 5.4ms, and external load resistance has nothing to do with the resistance. The research shows that the response time of linear photoconductive detector is determined by the microstructure of semiconductor material. The detector can be equivalent to the parallel connection of constant current source and photoresistor. When the external output circuit is connected, its total response time and detector response time And the photoelectric detection circuit time constant of two parameters, the general application can be taken as the detector response time.