本文报道了采用提拉法在不同加热系统中和不同生长气氛下进行的LiCaAlF6 晶体生长的实验 ,以探索高质量晶体的生长条件 ,并讨论了在晶体生长过程中晶体内部和表面上的某些缺陷的形成原因。为了获得高质量的晶体 ,抑制原材料的氧化和挥发 ,实现生长过程的稳定控制 ,是晶体生长过程中不可忽视的三要素。在较小的温度梯度、较高真空度 (2× 10 - 2 Pa)、敞开式保温体系、较高控温精度 (± 0 .1℃ )及充入保护气体CF4 条件下 ,可生长高质量的LiCaAlF6 晶体。 In this paper, experiments on the growth of LiCaAlF6 crystals by Czochralski method in different heating systems and in different growth atmospheres are reported to explore the growth conditions of high-quality crystals and to discuss some of the internal and superficial aspects of crystals during the crystal growth Defect formation causes. In order to obtain high-quality crystals, inhibit the oxidation and volatilization of raw materials to achieve stable control of the growth process, is the crystal growth process can not be ignored three elements. Under the conditions of smaller temperature gradient, higher vacuum (2 × 10 -2 Pa), open-type insulation system, higher temperature control accuracy (± 0.1 ℃) and charging of CF4, Of LiCaAlF6 crystals.