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以半解析热分析理论为基础,研究超高斯分布激光二极管(LD)端面抽运背冷式微片Nd:YAG晶体的热效应。通过对超高斯分布激光二极管端面抽运背冷式微片Nd:YAG晶体工作特点分析建立热模型,利用热传导方程新的求解方法得出微片Nd:YAG晶体内部温度场、热形变场、附加光程差(OPD)半解析计算表达式;利用附加光程差得出微片Nd:YAG晶体的热焦距计算表达式。研究结果表明,当使用总功率为24.2 kW,10%占空比4阶超高斯分布激光二极管抽运时,微片上获得70.36℃最高温升,0.465μm最大热形变,0.836μm最大附加光程差。
Based on the semi-analytical theory of thermal analysis, the thermal effect of the back-cooled microchip Nd: YAG crystal on the face of a super-Gaussian distributed laser diode (LD) is studied. The thermal model of Nd: YAG crystal was established by analyzing the operating characteristics of back-cooled microchip Nd: YAG laser with ultra-Gaussian distributed laser diode. The temperature field, thermal deformation field and additional light of Nd: YAG crystal were obtained by the new solution of heat conduction equation Parallax (OPD) semi-analytical calculation of the expression; the use of additional optical path difference derived microcrystalline Nd: YAG crystal thermal focal length calculation expression. The results show that the maximum temperature rise of 70.36 ℃, the maximum thermal deformation of 0.465μm, and the maximum additional optical path difference of 0.836μm are achieved when using a 4-order super-Gaussian distributed laser diode with a total power of 24.2 kW and a duty cycle of 10% .