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1946年 ,E.Purcell[1 ]首次提出 ,通过把原子置于具有电磁波长尺度的低损耗腔中 ,能显著改变原子激发态的自发发射。最近 ,随着半导体激光器的出现和晶体生长及制造工艺的改进 ,对具有自发发射控制[2～ 4] 的半导体光学微腔的设计制作已有日益增长的兴趣。垂直腔面发射激光器 (
In 1946, E.Purcell [1] proposed for the first time that spontaneous emission of atomic excited states can be significantly changed by placing atoms in low-loss cavities with electromagnetic wavelength scales. Recently, with the advent of semiconductor lasers and improvements in crystal growth and manufacturing processes, there has been a growing interest in the design and fabrication of semiconductor optical microcavities with spontaneous emission control [2-4]. Vertical cavity surface emitting laser (