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采用射频等离子体辅助分子束外延技术(P-MBE),在石英玻璃基片上制备了高纯度的透明导电ZSO薄膜,利用X射线衍射、原子力显微镜、Hall测试仪和光谱测量等表征技术,研究了射频功率对ZSO的结晶性能、表面形貌、电学参数及透射率等的影响。研究结果表明,在室温350W离化气源功率下,非晶态ZSO薄膜表面平整度高,室温电子迁移率达11.47cm2·V-1·s-1,电阻率为1.497Ω·cm,光学禁带宽度为3.53eV。分析得出,采用此工艺制备的非晶ZSO透明导电薄膜,具有优良的光电性能,是制备透明导电薄膜晶体管的优良宽禁带半导体材料。
High-purity transparent conductive ZSO thin films were prepared on quartz glass substrates by radio-frequency plasma-assisted molecular beam epitaxy (P-MBE). X-ray diffraction, atomic force microscopy, Hall tester and spectrometry were used to characterize the Effect of RF Power on the Crystallization, Surface Morphology, Electrical Parameters and Transmittance of ZSO. The results show that the surface roughness of the amorphous ZSO thin film is high at a power of 350 W at room temperature, the electron mobility at room temperature reaches 11.47 cm 2 · V -1 · s -1 and the resistivity is 1.497 Ω · cm. The bandwidth is 3.53eV. The analysis shows that the amorphous ZSO transparent conductive film prepared by this process has excellent photoelectric properties and is an excellent wide bandgap semiconductor material for preparing transparent conductive thin film transistors.