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在半导体器件制造的蚀刻工艺中,目前还是以湿式化学蚀刻用得比较多。据美国统计,现在使用的湿式蚀刻设备,仍占54.2％。其余的占45.8％。干式蚀刻工艺虽多,但以等离子蚀刻使用得较多,约占33.7％。它表明,当前半导体器件生产仍然应用老的湿式技术。这种工艺工序繁琐、效率低、成本高,巳不能满足当前日益增长的需要。近几年来,除了继续开展于式离子蚀刻技术研究以外,美、日等国还在研制激光蚀刻新工艺。其中以美国起步较早,开展研究的也比较多,比如,贝尔研究所采用F_2准分子激光器进行了高分辨率真空紫外线光
In the etching process of manufacturing semiconductor devices, wet chemical etching is still used more often. According to the statistics of the United States, the currently used wet etching equipment still accounts for 54.2%. The rest accounted for 45.8%. Although the dry etching process is more, but plasma etching used more, accounting for 33.7%. It shows that the current production of semiconductor devices still uses the old wet technology. Such a complicated process, low efficiency and high cost can not meet the current growing needs. In recent years, in addition to continuing to carry out in-type ion etching technology research, the United States, Japan and other countries are still developing new laser etching process. Among them, the United States started earlier, more research carried out, for example, Bell Institute F 2 excimer laser high-resolution vacuum ultraviolet light