磷化铟作为新型化合物半导体材料,已在国内外引起广泛重视。它在微波和光电器件中都能应用,尤其是用它作衬底来生长GaInAsP异质结外延层,制造红外发光二极管、激光器和光雪崩二极管,作为长波长范围的光纤通信中的光源和探测器,已进入实用阶段。因此,生长质量好的InP单晶,便成为一个迫切需要研究的课题。Mullin首先用LEC法,在高压下制备了磷化铟单晶。但是,在其生长过程中,孪晶出现是一个比较突出的问题。许多研究工作者曾为此进行了不少工作,但迄今仍未找到有效防止孪晶出现的途径。我们工作是根据磷化铟生长特点:寻找 Indium phosphide as a new type of compound semiconductor materials, has attracted widespread attention at home and abroad. It can be used in both microwave and optoelectronic devices, especially as a substrate for growth of GaInAsP heterojunction epilayers to fabricate infrared light-emitting diodes, lasers, and light avalanche diodes as light sources and detectors in long wavelength range optical fiber communications , Has entered a practical stage. Therefore, the growth of good quality InP single crystal, has become an urgent need to study the subject. Mullin first LEC method, prepared under high pressure indium phosphide single crystal. However, twinning appears to be a prominent issue during its growth. Many researchers have done a lot of work to this end, but so far no effective prevention of twins has been found. Our work is based on indium phosphide growth characteristics: looking for