研究了ＧｅＳｉＯ２光敏缺陷的特性，分别在４８８ｎｍＡｒ离子激光与１９３ｎｍＡｒＦ准分子激光作用下，由紫外吸收带、激光荧光的测量实验及电子自旋共振实验，发现光纤中５．１ｅＶ锗缺陷吸收带实际上是由５．０６ｅＶ可光致漂白带与５．１７ｅＶ不可漂白带组成；２９５ｎｍ的激发荧光与５．０６ｅＶ的缺氧锗缺陷对应，随５．０６ｅＶ缺陷吸收带的漂白而衰减；而３９５ｎｍ的激发荧光与５．１７ｅＶ的缺陷有关，随紫外光作用荧光强度保持为常数；提出了这两种缺陷的结构模型，讨论了吸收带漂白与曝光剂量的关系以及缺陷在不同激光照射下的光敏作用。 The characteristics of GeSiO2 photosensitive defects were investigated. The UV absorption bands, laser fluorescence measurements and electron spin resonance experiments of 488nm Ar and 193nm ArF excimer laser show that 5.1eV germanium defect absorption band in fiber is actually Is composed of a 5.06eV photobleachable band and a 5.17eV unbleachable band; the 295nm excitation fluorescence corresponds to a 5.06eV defect of anoxia germanium, decaying with a bleaching of a 5.06eV defect absorption band; and a 395nm excitation Fluorescence is related to the defect of 5.17eV, and the fluorescence intensity is kept constant with the action of UV light. The structural models of these two defects are proposed. The relationship between the bleaching and exposure dose of the absorption band and the photosensitivity of the defect under different laser irradiation are discussed.