通过大量解剖双极型晶体管和集成电路芯片,研究硅平面器件制造过程中诱生缺陷与“发射区陷落效应”之间的关系。认为“发射区陷落效应”不仅与发射区杂质扩散的表面浓度,扩散时间及基区结深有关,而且与器件制造工艺过程中诱生缺陷,特别是与氧化杆状层错及微缺陷有关。文章探讨了诱生缺陷对这种效应影响的物理机构。提出了消除这种效应的方法。 By analyzing a large number of bipolar transistors and integrated circuit chips, the relationship between induced defects and “fall-off effect of emissive regions” during the manufacture of silicon planar devices was studied. It is considered that the “fall-off effect of the emitter region” is not only related to the surface concentration, diffusion time and junction depth of the impurity diffusion in the emitter region, but also relates to the induced defects in the manufacturing process of the device, particularly the oxidation layer fault and microdefect. The paper explores the physical mechanisms that induce defects on this effect. Proposed ways to eliminate this effect.