针对IGBT断态下由外加dv/dt引起的瞬时开通现象,基于IGBT的工作机理与物理模型进行分析并建立预测模型,并且实现了模型所需参数的准确提取。并针对某型器件采用该模型进行仿真计算,计算结果与实验测量值具有较好的一致性,证明了该模型方法的准确性。该模型对于指导IGBT的工程应用具有实际价值。 Aiming at the transient turn-on phenomenon caused by applied dv / dt in IGBT off-state, the working mechanism and physical model of IGBT are analyzed and the predictive model is established, and the exact parameters required for the model are extracted. The model is used to simulate a certain type of device. The calculated results are in good agreement with the experimental measurements, and the accuracy of the model is proved. This model has practical value for guiding the engineering application of IGBT.