用两步退火法在掺 Cd Se S的玻璃中制备了高密度的量子点 ,均匀性较好 .量子点尺寸随第二步退火时间加长而增大 ,但组份基本不变 .研究了量子点光学性质与退火时间的依赖关系 ,证明光致发光谱中的低能峰与量子点表面缺陷态有关 .量子点尺寸越小 ,比表面积越大 ,该峰相对强度越大 The two-step annealing method was used to prepare high-density quantum dots in CdSeS-doped glass with better uniformity. The size of QDs increased with the increase of annealing time in the second step, The dependence of the optical properties on the annealing time proves that the low energy peak in the photoluminescence spectrum is related to the surface defect state of quantum dots.The smaller the quantum dot size and the larger the specific surface area, the larger the relative intensity of the peak