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以Zn(NO3)2.6H2O为前驱体,采用超声喷雾热解法在500℃下、在钠钙硅浮法玻璃衬底上制备了ZnO薄膜。分别在不同温度(500、550、600℃)和不同时间(30、60、120min)对制备的ZnO薄膜进行了退火处理。研究退火条件对ZnO薄膜微观结构、形貌以及光学性能的影响。结果表明:退火处理能提高ZnO薄膜的c轴取向;随着退火时间的延长,ZnO薄膜附着强度随之增加,但c轴取向度呈先增强,至120min时又开始呈下降的趋势;随着退火温度的升高,ZnO薄膜的c轴取向亦出现先显著增强,之后又开始下降的趋势,同时可见光透过率亦呈相同的变化趋势。最佳退火条件为500℃温度保温60 min,此时薄膜不仅c轴取向生长优势明显,结晶质量良好,表面颗粒大小均匀,致密平滑,同时薄膜的可见光透过率由退火前的70%提高到90%。
ZnO thin films were prepared on soda-lime-silica float glass substrates by ultrasonic spray pyrolysis at 500 ℃ using Zn (NO3) 2.6H2O as precursor. The prepared ZnO films were annealed at different temperatures (500, 550, 600 ℃) and at different times (30, 60, 120min) respectively. The effects of annealing conditions on the microstructure, morphology and optical properties of ZnO films were investigated. The results show that the annealing treatment can improve the c-axis orientation of ZnO thin films. With the extension of annealing time, the adhesion strength of ZnO thin films increases, but the c-axis orientation increases first and then decreases again at 120 min. When the annealing temperature is increased, the c-axis orientation of the ZnO thin film also shows a significant increase first, and then begins to decline. At the same time, the visible light transmittance shows the same trend. The optimal annealing conditions were that the temperature was maintained at 500 ℃ for 60 min. At this time, the film not only had the obvious advantage of c-axis growth but also had good crystal quality, uniform and smooth particle size, and the visible light transmittance of the film increased from 70% before annealing 90%.