采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的１０单元ＩｎＧａＡｓ应变层单量子阱镇相列阵激光器。在高达４×Ｉｔｈ的工作电流范围内，获得了主单瓣远场输出，单瓣束宽最低达０．６４°，接近衍射极限。考虑了角反射器引入的纵模与侧模之间的耦合，及载流子注入引起的反折射率导引，用微扰理论作了模拟计算，表明角反射器耦合是锁相列阵的一种新的耦合机制；主瓣对应于同相锁定，支瓣是由周期性微扰引入的高阶本征模。 A 10-element InGaAs strained single quantum well town phase array laser was designed and fabricated by reactive ion etching. In the operating current range up to 4 × Ith, the main single-lobe far-field output was obtained, with the single-beam width reaching a minimum of 0.64 °, approaching the diffraction limit. Taking into account the coupling between the longitudinal mode and the side mode introduced by the corner reflector and the antireflection index guided by the carrier injection, the perturbation theory is used to simulate the calculation. It is shown that the corner reflector coupling is a phase locked array A new coupling mechanism; the main lobe corresponds to in-phase locking, and the branch lobe is a high-order eigenmode introduced by periodic perturbation.