【摘 要】
：
研究了掺钛水热法制备多孔硅的Raman光谱和光致发光谱.实验发现,当激光功率较低时,多孔硅的Raman光谱在略低于520cm-1附近表现为一锐的单峰,和晶体硅的Raman光谱类似.随激光
【机 构】
：
郑州大学河南省激光应用技术重点实验室
论文部分内容阅读
研究了掺钛水热法制备多孔硅的Raman光谱和光致发光谱.实验发现,当激光功率较低时,多孔硅的Raman光谱在略低于520cm-1附近表现为一锐的单峰,和晶体硅的Raman光谱类似.随激光功率增大,该单峰向低波数移动,Ramar和光致发光峰的强度与激光强度的一次方成正比.当激光功率增大到一定值时,该单峰分裂成两个Raman峰,光致发光谱的强度突然增大,与激光强度之间不再满足一次方的关系,位于低波数一侧的Raman峰随激光功率增大进一步向低波数移动.多孔硅Raman光谱随激光功率的变化是由于激光诱导多孔硅的晶格畸变,导致LO和TO模的简并解除引起的.同时,激光诱导晶格畸变可能使多孔硅由线性变为非线性光学材料,而且具有非常大的光致非线性吸收系数.更重要的是,多孔硅的Raman光谱和光致发光谱随激光功率变化的现象是可逆的,这可能预示着多孔硅一些新的应用.
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