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由于等离子体在低温下具有高活性的特点 ,等离子体增强化学气相沉积 (PECVD)技术可显著降低薄膜沉积的温度范围。通常条件下 ,高质量碳纳米管的生长要求 80 0℃以上的基片温度 ,若能使该温度降到4 0 0℃以下 ,则对许多应用非常有利 ,如可以在玻璃基片上沉积碳纳米管场发射电极。目前 ,碳纳米管基纳电子器件的研制这一课题备受关注 ,如果能实现低温原位制备碳纳米管 ,则可能将纳电子器件与传统的微电子加工工艺结合并实现超大容量的超大规模集成电路。本文主要介绍近年来生长碳纳米管所采用的各种等离子体化学气相沉积技术 ,讨论影响碳纳米管生长特性的几个关键因素
Due to the plasma’s high activity at low temperatures, plasma-enhanced chemical vapor deposition (PECVD) can significantly reduce the temperature range of film deposition. Under normal conditions, the growth of high-quality carbon nanotubes requires a substrate temperature of 80 ° C or above. If the temperature is lowered to below 400 ° C, it is very advantageous for many applications. For example, carbon nano-particles can be deposited on a glass substrate Field emission electrode. At present, the subject of the research on the carbon nanotube-based electronic devices has drawn much attention. If the carbon nanotubes can be prepared at low temperature in situ, the nanoelectronic devices may be combined with the traditional microelectronic processing technology to realize ultra-large-scale ultra-large-scale integrated circuit. This article mainly introduces various plasma CVD techniques used to grow carbon nanotubes in recent years and discusses several key factors that affect the growth characteristics of carbon nanotubes