论文部分内容阅读
报道了320×256元AlxGa1-xN日盲型紫外探测器及其焦平面阵列探测器的研制情况,介绍了材料生长、器件制备工艺和器件的光电特性。器件的开启电压大于3.5 V,-0.5 V偏压时暗电流小于1.2×10-12A(φ=300μm台面),光谱响应范围260~280 nm,268 nm峰值波长的响应度大于0.095 A/W。器件实现了日盲紫外成像演示。
This paper reports the development of the 320 × 256 element AlxGa1-xN solar blind type UV detector and its focal plane array detector, and introduces the material growth, the device fabrication process and the photoelectric properties of the device. The device’s turn-on voltage is greater than 3.5 V and the dark current is less than 1.2 × 10-12 A (φ = 300 μm) at a bias voltage of -0.5 V with a spectral response of 260-280 nm and a responsivity of greater than 0.095 A / W at a peak wavelength of 268 nm. The device implements a solar-blind UV imaging demonstration.