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用直流反应溅射方法在Ｓｉ（１００）基片上生长出具有六角晶型的ＺｎＯ 薄膜．测量了样品的阴极射线发光特性及其与薄膜晶体结构的关系．在所有测量样品中均观察到较强的绿带（５２０ｎｍ ）发射，随着薄膜单晶程度的提高，光谱中开始出现蓝带（～４５０ｎｍ ），并在类单晶薄膜中看到了强度大于绿带的近紫外谱带（３９０ｎｍ ）；它的强度随着阴极射线电子束流密度增加而迅速增加．根据ＺｎＯ 中激子的结合能数据，推测紫带发射来源于ＺｎＯ 的激子跃迁．实验结果说明，通过改进薄膜的结晶状况可进一步增强ＺｎＯ薄膜的短波长发光
A hexagonal ZnO thin film was grown on a Si (100) substrate by direct current reactive sputtering. The cathode ray emission characteristics of the sample and its relationship with the crystal structure of the thin film were measured. The strong green band (520nm) emission was observed in all the samples. With the increase of the single crystal degree of the film, the blue band (~ 450nm) started to appear in the spectrum, and the intensity of the green band The near-UV band of the band (390 nm); its intensity increases rapidly as the cathode beam electron beam current density increases. According to the binding energy data of excitons in ZnO, it is inferred that the violet band emission originates from the exciton transition of ZnO. The experimental results show that by improving the crystallization of the film can further enhance the short-wavelength ZnO thin film luminescence