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采用二维 TMA Medici模拟软件对 SOI结构的串扰特性进行了分析 .模拟发现随着频率的增加 ,SOI的埋氧化物对串扰噪声几乎不起隔离作用 ,同时 ,连接 SOI结构的背衬底可以在很大程度上减小串扰的影响 .还对减少串扰的沟槽隔离工艺、保护环及差分结构的有效性进行了比较分析 ,对一些外部寄生参数对串扰的影响也进行了研究 .并给出了 SOI结构厚膜和薄膜结构体掺杂浓度对噪声耦合的影响 ,所得到的结果对设计低噪声耦合的 SOI数模混合集成电路具有指导性的作用
The two-dimensional TMA Medici simulation software was used to analyze the crosstalk characteristics of SOI structure.It was found that SOI buried oxide could hardly isolate crosstalk noise with the increase of frequency, meanwhile, The influence of crosstalk is greatly reduced, the isolation technology of trench crosstalk, the effectiveness of guard ring and differential structure are comparatively analyzed, and the influence of some external parasitic parameters on crosstalk is also studied. The effects of the doping concentrations of SOI structure thick film and thin film structure on the noise coupling are obtained. The results obtained are instructive for the design of low noise coupled SOI digital-analog hybrid integrated circuits