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描述了为改善其表面驻极态的抗湿能力 ,对 Si基 Si3N4 和 Si3N4 /Si O2 薄膜驻极体所进行的化学表面修正的基本原理。以六甲基二硅胺烷 (HMDS)和二氯二甲基硅烷 (DCDMS)两种化学修正试剂对这类薄膜驻极体的改性效果进行了对比性的研究。结果指出 :从抗湿能力考虑 ,经 DCDMS修正的氮、氧化硅驻极体的电荷稳定性优于 HMDS处理的样品 ,是由于这类修正形成了更完善的表面单分子疏水层 ;但如果从驻极体的储电热稳定性方面考虑 ,以 HMDS处理的样品优于 DCDMS样品 ,是由于被 HMDS修正的表面层内形成了较高浓度的深能级陷阱。
Describes the fundamentals of chemical surface modification of Si-based Si3N4 and Si3N4 / Si02 thin film electrets to improve the moisture resistance of their surface electrets. A comparative study of the modification effect of these film electrets with two chemical modification reagents, hexamethyldisilazane (HMDS) and dichlorodimethylsilane (DCDMS), was carried out. The results indicate that the charge stability of nitrogen and silicon oxide electrets modified by DCDMS is better than that of HMDS treated by DCDMS due to their anti-wetting ability. This modification results in a more perfect surface monomolecular hydrophobic layer. However, Electret stability in terms of stored heat, HMDS-treated samples are superior to DCDMS samples due to the HMDS-modified surface layer to form a higher concentration deep-level trap.