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在室温条件下,利用自行设计的平面“S”形磁过滤等离子体设备,在(111)面单晶硅上制备TiN薄膜,通过改变基底偏压和反应气体成分,即通过改变氮气和氩气的气体流量来改变沉积离子的能量和密度,从离子轰击的角度研究了沉积条件对TiN薄膜织构的影响。对薄膜的表面形貌进行观察,用(θ～2θ)和1.5°掠入射2种X射线衍射方法对薄膜晶体结构和晶面取向进行了分析,对薄膜进行了电子衍射研究。结果显示磁过滤等离子制备的TiN薄膜表面平整光滑,颗粒尺寸为20～70nm,且基底偏压和氩气流量的增大促使薄膜发生(111)面的择优取向,且(111)晶面与膜表面平行,而在高氩气流量的情况下,(200)和(220)面在薄膜平面也发生了定向排列。
TiN thin films were prepared on (111) single-crystal Si by using self-designed planar “S” shape magnetic filtration plasma equipment at room temperature. By changing the substrate bias and reaction gas composition, Argon gas flow to change the energy and density of the deposited ions from the ion bombardment point of view of the deposition conditions TiN film texture. The surface morphology of the film was observed. The crystal structure and crystal orientation of the film were analyzed by two kinds of X-ray diffraction (θ ~ 2θ) and 1.5 ° grazing incidence. The electron diffraction of the film was studied. The results show that the surface of TiN film prepared by magnetic filtration plasma is smooth and the particle size is 20 ~ 70nm. The increase of substrate bias voltage and Ar gas flow rate leads to the preferential orientation of (111) The surfaces are parallel, while in the case of high argon flow, the (200) and (220) planes are also aligned in the film plane.