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本文描述了用自对准工艺制各自对准结构的α－Ｓｉ：ＨＴＦＴ。从理论上分析了有源层α－Ｓｉ：Ｈ的厚度对α－Ｓｉ：ＨＴＦＴ特性的影响，据此提出一种新型的双有源层结构的α－ＳｉＴＦＴ。它可以有效地提高自对准α－Ｓｉ：ＨＴＦＴ的开态Ｉ＿（ＯＮ），其通断电流比Ｉ＿（ＯＮ）／Ｉ＿（ＯＦＦ）＞１０￣５。
This paper describes the a-Si: HTFT of the individual alignment structures fabricated using the self-aligned process. The influence of the thickness of α-Si: H active layer on the properties of α-Si: HTFT is theoretically analyzed. A novel α-SiTFT with double active layer structure is proposed. It can effectively improve the self-aligned α-Si: HTFT open I_ (ON), its on-off current ratio I_ (ON) / I_ (OFF)> 10 ~