采用直流磁控溅射的方法,分别在Si(111)和玻璃基片上沉积AlN薄膜.利用X射线衍射仪、X射线能谱仪、台阶仪、原子力显微镜、分光光度计和傅里叶变换红外光谱仪等分析薄膜的结构、组分、膜厚、形貌和光学性能.实验得到的样品为多晶六方相AlN,膜厚为720nm,含有少量的氧杂质.对AlN薄膜的光学性能的研究表明,样品在250～1000nm波长范围内具有较高的透过率;红外吸收谱以672cm-1为中心形成一个很宽的红外吸收带;薄膜的禁带宽度约为5.94eV. AlN thin films were deposited on Si (111) and glass substrates respectively by DC magnetron sputtering.The structures of the films were characterized by X-ray diffraction, X-ray energy dispersive spectroscopy, stepper, atomic force microscope, spectrophotometer and Fourier transform infrared Spectroscopy and other analysis of the film structure, composition, film thickness, morphology and optical properties of the sample obtained for the polycrystalline hexagonal AlN, a film thickness of 720nm, containing a small amount of oxygen impurities on the optical properties of AlN film showed , The sample has high transmittance in the wavelength range of 250-1000 nm; the infrared absorption spectrum forms a very wide infrared absorption band centered at 672 cm-1; the bandgap of the film is about 5.94 eV.