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The Ti-A1 ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test pattes with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64x 10-6Ω·cm2 is achieved after annealing in N2 at 900C for 5 min. The sheet resistance Rsh of the implanted layers is 975Ω/□. X-ray diffraction (XRD) analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.