论文部分内容阅读
BaZnP2O7∶Eu3+ phosphor was synthesized by a high temperature solid state reaction.The compound shows four major emission peaks locating at 588,613,622 and 654 nm that correspond to the 5D0-7F1,5D0-7F2 and 5D0-7F3 typical transition of Eu3+,respectively.The influence of the concentration of Eu3+ ions on the emission intensity was investigated and the concentration quench did not occured.The role of charge compensation of Li+,Na+ and Cl-ions to the emission intensity was also studied.It was found that Li+ ions gave the best improvement to enhance the intensity of the emissions.The results show that BaZnP2O7∶Eu3+red-emitting phosphor is very suitable for white light emitting diode(w-LED)based on UV InGaN chip.
BaZnP2O7: Eu3 + phosphor was synthesized by a high temperature solid state reaction. The compound shows four major emission peaks locating at 588, 613, 622 and 654 nm that correspond to the 5D0-7F1, 5D0-7F2 and 5D0-7F3 typical transitions Eu3 +, respectively. influence of the concentration of Eu3 + ions on the emission intensity was investigated and the concentration quench did not occured. The role of charge compensation of Li +, Na + and Cl-ions to the emission intensity was also studied .It was found that Li + ions gave the best improvement to enhance the intensity of the emissions. The results show that BaZnP2O7: Eu3 + red-emitting phosphor is very suitable for white light emitting diode (w-LED) based on UV InGaN chip.