论文部分内容阅读
半导体固态照明采用InGaN基量子阱发光二极管(LED),不仅可以节省能源、减少污染,还具有体积小、寿命长等优点。但是LED外量子效率一直较低,文章介绍了LED芯片表面加工的各种微结构。如表面粗糙化结构,二维光子晶体结构,在p-GaN上生长纳米杆等。从而有效提高了LED外量子效率。
Semiconductor solid state lighting using InGaN-based quantum well light-emitting diode (LED), not only can save energy, reduce pollution, but also has a small size, long life and other advantages. However, the external quantum efficiency of the LED has been low, the article describes the various microstructures of the LED chip surface processing. Such as surface roughened structure, two-dimensional photonic crystal structure, the growth of nano-rods on p-GaN and so on. Thus effectively improving the external quantum efficiency of the LED.