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测试了国产和美国Cree公司生产的n型6H-SiC低温下的电学参数,包括电阻率、迁移率和自由载流子浓度,并用FCCS软件数据拟合分析得到两种SiC的杂质浓度和能级.实验结果表明:杂质浓度和补偿度对低温下SiC的电性能有很大影响,轻度补偿的掺氮6H-SiC是施主氮的两个能级共同起作用;而重度补偿的6H-SiC在低温时则是受主能级起作用,并且后者迁移率随温度变化曲线的峰值降低并右移.同时发现重度补偿的SiC在较低温度时由n型转变成了p型,并从理论上分析了产生这种现象的原因.
The electrical parameters, including resistivity, mobility and free carrier concentration, of n-type 6H-SiC fabricated by Cree Company of China and the United States were tested. The impurity concentrations and energy levels The experimental results show that the impurity concentration and compensation degree have a great influence on the electrical properties of SiC at low temperature. The lightly compensated nitrogen-doped 6H-SiC works together at two energy levels of donor nitrogen. The heavily compensated 6H-SiC At low temperature, it is the acceptor level, and the latter decreases with the peak value of the temperature curve and moves to the right.It is also found that heavily compensated SiC changes from n-type to p-type at lower temperature and from Theoretically analyzed the reasons for this phenomenon.