基于弹性力学的接触理论 ,研究了导向环、工件与抛光垫接触的压力场分布形态 ,提出了通过改变压头变形板的悬伸长度和厚度改变接触区域的压强分布的新技术 ,从而实现了均衡压力场研磨和抛光 ,利用该技术可使半导体晶片在抛光过程中获得均匀一致的材料去除 ,并且在给定的实验条件下使平面度达 0 .2 5～ 0·33μm/76mm ,表面粗糙度Ra值分布不大于 5%。 Based on the contact theory of elastic mechanics, the distribution of the pressure field of the contact ring and the workpiece in contact with the polishing pad was studied, and a new technique of changing the pressure distribution in the contact area by changing the overhang length and thickness of the indenter was proposed. Equalization pressure field grinding and polishing, the use of the technology allows the semiconductor wafer in the polishing process to obtain a uniform material removal, and under given experimental conditions flatness of 0. 25 ~ 0 · 33μm /  76mm, the surface Roughness Ra value distribution of not more than 5%.