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The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate(RR) on the polishing characteristics of copper.The oxidizer concentration is 1 Vol%;the abrasive concentration is 0.8 Vol%;the chelating agent of the solution is 2 Vol%.The working pressure is 1 kPa.The defect on the surface is degraded and the surface is clean after polishing.The removal rate is 289 nm/min and the WIWNU is 0.065.The surface roughness measured by AFM after CMP(chemical mechanical planarization) is 0.22 nm.
The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-equal WIWNU) and the removal rate (RR) on the polishing characteristics of copper. The oxidizer concentration is 1 Vol% The abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm / min and the WIWNU is 0.065. The surface roughness measured by AFM after CMP (chemical mechanical planarization) is 0.22 nm.