We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride (hBN) at low temperatures using a diamond anvil cell (DAC).It is found that the redshift rate of emission energy is up to 10meV/GPa,demonstrating a controllable tuning of single photon emitters through pressure.Based on the distribution character of pressure coefficients as a function of wavelength,different kinds of atomic defect states should be responsible for the observed defect emissions.